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| @vic MMBT2907ALT1 SOT-23 Plastic-Encapsulate Transistors MMBT2907ALT1 FEATURES Power dissipation PCM: 0.3 TRANSISTOR (PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR W (Tamb=25) 1. 0 2. 4 1. 3 0. 95 Collector current -0.6 A ICM: Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) VBE(sat) VCE=-10V, IC= -1mA IC=-500mA, IB=-50 mA IC= -500mA, IB=-50 mA VCE=-20V, IC= -50mA Transition frequency 2. 9 1. 9 0. 95 Unit: mm unless otherwise specified) Test conditions MIN -60 -60 -5 -0.1 -0.1 -0.1 100 50 -1 -2 V V 300 TYP MAX UNIT V V V A A A Ic= -10A , IE=0 IC= -10 mA , IB=0 IE= -10A, IC=0 VCB= -50V, IE=0 VCB= -3V, IB=0 VEB= -3V, IC=0 VCE=-10V, IC= -150mA fT f = 100MHz 200 0. 4 MHz DEVICE MARKING: MMBT2907ALT1 =2F Copyright @vic Electronics Corp. Website http://www.avictek.com |
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